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Guatemala N-type silicon wafer
N-type silicon wafer
Growth method: Straight stretching method
Crystallinity: Single crystal
Dimensions: 182mm*182mm
Thickness: 130±10μm
Category:
Product Description
High Conversion Efficiency,
Front-side efficiency ≥26%
Bifaciality≥80%
Lower LID
Exceptional PID resistance
Lower Power Temperature Coefficient
Lower sealing losses, better suited to high efficiency module
Material properties
| Growth method | Straight stretching method |
| Crystallinity | Single crystal |
| Dimensions | 182mm*182mm |
| Thickness | 130±10μm |
Product features
| Resistance ratio | 0.4-1.6Ω.cm |
| Oxygen content | ≤12ppma |
| Carbon content | ≤1ppma |
| Minority carrier lifetime | ≥800μs |
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