N-type silicon wafer

N-type silicon wafer

Straight stretching method

Single crystal

182mm*182mm

130±10μm

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High Conversion Efficiency,
Front-side efficiency ≥26%


Bifaciality≥80%


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Lower LID


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Exceptional PID resistance


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Lower Power Temperature Coefficient


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Lower sealing losses, better suited to high efficiency module

Material properties

Growth method Straight stretching method
Crystallinity Single crystal
Dimensions 182mm*182mm
Thickness 130±10μm

Product features

Resistance ratio 0.4-1.6Ω.cm
Oxygen content ≤12ppma
Carbon content ≤1ppma
Minority carrier lifetime ≥800μs

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